Scanning near field optical microscopy (SNOM) was applied to study the carrier localization in single InGaN/GaN quantum well structures grown on nonpolar m-plane GaN substrates. Dual localization potential consisting of hundreds of nanometers- to micrometer-size areas as well as smaller localization centers were identified from the SNOM scans and near field photoluminescence spectral widths. The localization areas were found to align along the [0001] direction, which was attributed to partial strain relaxation at the monolayer steps.
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Liuolia et al. (2010) studied this question.
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