A new Si cluster material, tertiary-butyloctasilacubane (tBuSi)8, is used as an efficient Si doping source for molecular beam epitaxy of GaAs. The vapor pressure of this material varies according to an activation energy of 1.51 eV. A Si concentration of 2×1020/cm3 is obtained at a Si cluster cell temperature of 210°C and a GaAs growth rate of 1 µm/h. Although the grown layers suffer from heavy carbon contamination from the Si cluster, this problem can be alleviated by increasing the substrate temperature.
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Horíkoshi et al. (1994) studied this question.
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