Epitaxial zinc blende structure metastable (GaAs)1−x(Si2)x alloys have been grown with 0 0.12 exhibited increasing evidence of interfacial defects associated with lattice strain when grown on GaAs. However, defect-free alloys with x up to 0.3 were obtained using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers to provide a better lattice match.
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Mei et al. (1989) studied this question.
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