Interaction phenomena between deep levels and minibands in semiconductor superlattices

Calculations of the electronic states are presented for a new superstructure. This consists of a conventional heterojunction superlattice interleaved with a periodic array of deep centers located in the barrier layers. By appropriate choice of the quantum-well thickness and of the location of the deep center within the barrier, strong mixing between the defect and superlattice states takes place. Enhancement of the miniband widths by several orders of magnitude and the creation of new "hidden" Bloch states within the band gap of the superlattice are found.