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We discuss capacitance-voltage and optically excited deep-level transient spectroscopy (ODLTS) experiments carried out on boron-doped diamond, homoepitaxially grown by chemical-vapor deposition. ODLTS reveals an acceptor-type defect at 1.28 eV above the valence-band edge with a concentration of ≈1×10¹⁶cm^-3. From the temperature dependence of the ODLTS spectra, a lattice coupling of this electronic defect level is deduced, which is characterized by a Franck-Condon shift of 0.16 eV.
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Zeisel et al. (1999) studied this question.
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