Deep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitance–voltage measurements reveal a boron doping density of 7×1015 cm−3 and a trap density at 0.83 eV of ≈1015 cm−3. The results are discussed in comparison with data available in the literature.
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Zeisel et al. (1998) studied this question.
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