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July 15, 1989Journal of Applied Physics

Implant-induced high-resistivity regions in InP and InGaAs

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Authors

S. J. PeartonS. J. PeartonUniversity of StuttgartCAC. R. AbernathyUniversity of SienaMPM. B. PanishMurray State University

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Pearton et al. (1989) studied this question.

synapsesocial.com/papers/6a99df0c0d1af6986aac04b3https://doi.org/10.1063/1.343533
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  4. 4Resistivity increase in MBE Ga0.47In0.53As following ion bombardment1981 · 9 citations
  5. 5Light-ion-bombarded p-type In0.53Ga0.47As1988 · 22 citations