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December 21, 2007Electronics Letters

C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing

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Authors

JRJ. E. RothUniversity of California, Santa BarbaraOFOnur FidanerGrove Instruments (United States)EEElizabeth H. EdwardsIntelligent Fiber Optic Systems (United States)

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Roth et al. (2007) studied this question.

synapsesocial.com/papers/6a99e0fbe87681eadfde8a47https://doi.org/10.1049/el:20082979
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