Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition

Pulsed laser operation of the InGaAsP/InGaP double heterostructure, which was grown on GaAs for the first time by metalorganic chemical vapor deposition, was achieved in the temperature range 100–200 K. The lasing wavelength was 710 nm and the threshold current density was 5.9 KA/cm2 at 100 K. The characteristic temperature T 0 was found to be 67 K.