Low-cost technique for preparing n-Sb2S3/p-Si heterojunction solar cells

The first fabrication of low cost n-Sb2S3/p-Si heterojunction solar cells by chemical deposition method is reported. It is observed that in the case of n-Sb2S3 films chemically deposited with silicotungstic acid on p-Si and annealed, the photovoltaic properties of the n-Sb2S3/p-Si junctions are considerably improved. Under AM1 illumination, the improved junction exhibited an efficiency (η) of ∼5.19% on an active area of 0.05 cm2 without any antireflection coating whereas the n-Sb2S3 films deposited without STA on p-Si showed η=1.03%.