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A model for the electrical conduction in polycrystalline CdS films is developed. The model is based on the mechanisms of grain-boundary trapping and thermionic emission and tunnel transportation through the inter-grain energy barriers. The two possible regimes of whole and partial depletion of the grains are considered. The predictions of the model for the electrical conductivity are analysed over a dopant-density interval.
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Garcı́a-Cuenca et al. (1987) studied this question.
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