Basic principles of operation, fundamental power-generation capabilities, and fabrication technologies are reviewed for three groups of two-terminal devices, i.e., resonant-tunneling diodes (RTDs), transferred-electron devices (TEDs), and transit-time diodes. The paper focuses on devices for frequencies above 30 GHz, and an overview of recent research in this area and of various state-of-the-art laboratory results is given. As an outlook, the potential of some new material systems for high-power devices is discussed.
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Eisele et al. (1998) studied this question.
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