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Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 % was obtained at 135.3 GHz
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Eisele et al. (1992) studied this question.
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