Quantitative auger electron spectroscopy of Al x Ga 1 ‐xAs layers and superstructures grown by MBE

Quantitative Auger electron spectroscopy analysis is performed for the ternary system Al x Ga 1 ‐ x As with different x‐values. Thick layers and superstructures are grown by molecular beam epitaxy. The relative sensitivity factors are determined by the method of the internal reference element. Correction for preferential sputtering of Ga is accounted for by a correction factor determined relative to electron probe microanalysis measurements. The matrix corrections are unimportant for this system. The results will be compared with photoluminescence measurements.