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High and low energy Auger peaks of Al, Ga, and As have been used to study the influence of selective Ar ion sputtering of thin films and interfaces. A simple model is described which can be used to determine the number of layers that has to be removed to reach steady state conditions. It is shown that if GaAs samples are bombarded with Ar ions of an energy below 600 eV, the bulk composition can be found from the high energy Ga and As peaks.
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A. van Oostrom (1976) studied this question.
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