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The absorption edge of GaN rises exponentially to a value of about 4 × 105 cm−1 at 3.5 eV (at 300 °K) suggesting direct optical transitions and a high joint density of states. Another absorption, which sets in beyond 1.3μ, increases with the 7th to 8th power of the wavelength.
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Pánkové et al. (1970) studied this question.
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