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March 7, 2011Applied Physics Letters

High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

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Authors

LSLiwen SangFudan UniversityMLMeiyong LiaoNational Institute for Materials ScienceYKYasuo KoideNational Institute for Materials Science

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Sang et al. (2011) studied this question.

synapsesocial.com/papers/6a9a5826f7bc4aca2e45bcedhttps://doi.org/10.1063/1.3562326
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