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January 1, 2007Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaOpen Access

Leakage current and charge trapping behavior in TiO2∕SiO2 high-κ gate dielectric stack on 4H-SiC substrate

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Authors

RMRajat MahapatraNational Institute of Technology DurgapurACAmit K. ChakrabortyNational Institute of Technology DurgapurNPN. Poolamai

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Mahapatra et al. (2007) studied this question.

synapsesocial.com/papers/6a910674d2f2d69b3a745b09https://doi.org/10.1116/1.2433976
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