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March 12, 2004Applied Physics Letters

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face

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Authors

KFKenji FukudaFukuda Denshi (Japan)MKMakoto KatōHitachi (Japan)KKKazutoshi KojimaNational Institute of Advanced Industrial Science and Technology

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Fukuda et al. (2004) studied this question.

synapsesocial.com/papers/6a8bcc3d52e1a91077e97c48https://doi.org/10.1063/1.1682680
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