A CdTe PC-AlGaAs/GaAs FET OEIC has been fabricated for the first time. The compatibility of such an integration is shown. Such an integration permits the use of high-quality optical compounds with performance electronic materials. A responsivity of 30 A/W at 0.77 μm has been obtained for integrated circuits. This integration opens a new perspective in heterostructure infra-red OEICs.
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Fallahi et al. (1988) studied this question.
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