Characteristic temperature T o of Ga 0.83 In 0.17 As 0.15 Sb 0.85 /AI 0.27 Ga 0.73 As 0.02 Sb 0.98 injection lasers

Stripe injection lasers emitting at 2.18μm at room temperature with a threshold current density Jth = 7−9kA/cm2 have been prepared from Ga0.83In0.17As0.15Sb0.85/Al0.27Ga0.73As0.02Sb0.98 double heterojunctions. The characteristic temperature To of such devices measured between 80 K and 296 K was found to be To = 90 K, essentially controlled by the Auger effect at high temperature.