Structural, electrical, and thermoelectrical properties of (Bi1 − x Sb x )2Se3 alloys prepared by a conventional melting technique

Polycrystalline solid solutions of (Bi1 − x Sb x )2Se3 (x = 0, 0.025, 0.050, 0.075, 0.100) were prepared using a facile method based on the conventional melting technique followed by annealing process. X-ray analysis and Raman spectroscopical measurements revealed formation of Bi2Se3 in single phase. The electrical and thermoelectric properties have been studied on the bulk samples in the temperature range 100–420 K. The electrical conductivity measurements show that the activation energy and room-temperature electrical conductivity dependences on the Sb content respectively exhibit minimum and maximum values at x = 0.05. The thermoelectric power exhibited a maximum value near the room temperature suggesting promising materials for room-temperature applications. The highest power factor value was found to be 13.53 μW K−2 cm−1 and recorded for the x = 0.05 compound.