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August 19, 2011Applied Physics Express

Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride–trifluoroethylene)

Gwang-Geun Lee Yoshihisa Fujisaki Hiroshi Ishiwara Eisuke Tokumitsu

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Abstract

Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride–trifluoroethylene), Lee, Gwang-Geun, Fujisaki, Yoshihisa, Ishiwara, Hiroshi, Tokumitsu, Eisuke

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Lee et al. (2011) studied this question.

synapsesocial.com/papers/6a9a77b06bb205df309e6ebd https://doi.org/10.1143/apex.4.091103

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