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In this paper, the influences of fast neutron bombardment, high pressure and chemical substitution on the electronic properties of PbSe single crystals are studied. For the first time in p-PbSe an electronic transition has been established of 'metal-semiconductor' type accompanied by an increase of resistivity of several orders of magnitude under the action of fast neutron bombardment. A similar increase in electrical resistance R was observed also under application of high pressure P above ∼ 3-4 GPa. The last increase was associated with the phase transformation from the NaCl-lattice to the GeS-lattice, which was seen also in sharp jumps of thermopower S. From the R(P) and S(P) dependences a linear decrease has been found of pressure of the above phase transition with increase of (Sn) content for n-Pb 1-x Sn x Se (x = 0.06,0.08,0.125) compounds.
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Ovsyannikov et al. (2005) studied this question.
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