Atomic Layer Deposition of HfO[sub 2], TiO[sub 2], and Hf[sub x]Ti[sub 1−x]O[sub 2] Using Metal (Diethylamino) Precursors and H[sub 2]O

Tetrakis (diethylamino) hafnium (TDEAH), tetrakis (diethylamino) titanium (TDEAT), and were used for the atomic layer deposition (ALD) of , , and films on silicon substrates. The ALD temperature windows were found to be for and for . The overlap region is ideal for the ALD of the films. Different compositions of were obtained by varying the cycle ratios, and excellent tunability of film composition was found using X-ray photoelectron spectroscopy (XPS). The deposition rate was found to be the superposition of the two individual growth rates. Both as-deposited and postdeposition annealed films were studied with XPS, phase shift interferometry, and grazing incidence X-ray diffraction. As-deposited and films were found to be amorphous, and they began to crystallize after annealing at in the monoclinic phase and in weak anatase phase . The films remained amorphous after annealing up to about in for .