Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3)1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.