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Electron beam irradiation studies on 4′-pentyl-4-cyanobiphenyl (5CB) have been carried out. Dielectric measurements demonstrate that even a low level of irradiation (beyond a critical dose of ∼6kGy) results in a dramatic increase in the transverse component of the dielectric permittivity, and a corresponding decrease in the dielectric anisotropy. It is shown that the changes in dielectric parameters due to the irradiation can be fruitfully utilized to control the display performance of the device to a certain extent. The observed change in the dielectric parameters is attributed to the formation of a donor-acceptor type charge-transfer complex due to the irradiation.
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Dhar et al. (2008) studied this question.
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