Design of a temperature stable surface-acoustic-wave device on silicon

This is the authors' abstract. We don't add key points for this paper.

We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to −4.5×10−8/(°C)2 and it is close to that of the quartz ST-X.