110 GHz measurement of large-area graphene integrated in low-loss microwave structures

We report high-frequency scattering parameter measurement of large-area monolayer graphene integrated on low-loss quartz substrates. High-quality graphene was grown by chemical vapour deposition on copper, chemically hole doped, and transferred to quartz. Microwave measurements were performed from 0.01 to 110 GHz. Simple microwave models were used to extract graphene impedance parameters. We find that contact resistance is effectively shunted above 3 GHz. Atomically thin large area graphene behaves as a wideband resistor with negligible kinetic inductance and negligible skin effect.