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I show that recently reported oscillations in the current-voltage characteristics of GaAs-AlGaAs tunnel junctions are due to a combination of self-energy corrections to the density of states from electron-phonon interactions and successive phonon emission in the GaAs buffer layer. Alternative models based on space-charge modulation or point-contact transport do not explain the experimental data.
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Jisoon Ihm (1985) studied this question.
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