The detailed mechanism of secondary photocurrent generation in transistors due to short pulses of ionizing radiation is discussed quantitatively, and the results of 0.2-μsec (microsecond) flash X-ray experiments are explained. The dependences of the transient current pulse on transistor types, radiation dose, initial bias level, and external circuit impedance are presented. A possible equivalent circuit controlled by stored base charges is developed which makes it possible to predict more accurately the transient responses of many transistor circuits.
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Caldwell et al. (1963) studied this question.