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December 15, 1997Journal of Applied Physics

Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

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OBO. BaklenovThe University of Texas at AustinDHDiana L. HuffakerCalifornia NanoSystems InstituteAAA. AnselmApplied Optoelectronics (United States)

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Baklenov et al. (1997) studied this question.

synapsesocial.com/papers/6a9aa5d9a5ca4dc83886914chttps://doi.org/10.1063/1.366530
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