Characterization of Electron Traps in Aluminum-Implanted SiO2

Johnson, Johnson, and Lampert have studied the effect of Al implantation on the trapping behavior of SiO2. The large fluence that they used (1 × 1014Al/cm2) and the low annealing temperatures (up to 600°C) resulted in a trapping efficiency of 1 and made it impossible to characterize the traps. In the present study a lower fluence and higher annealing temperatures to reduce the trapping efficiency are used to permit characterization of the traps. The predominant trap cross sections are 1.26 × 10−16and 1.40 × 10−17cm2. In a companion paper by DiMaria, Young, Hunter, and Serrano the location of the trapped charge is discussed.