Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3] Gate Dielectric on InP Substrate

An experimental investigation on the impact of postgate plasma treatment on InP metal-oxide-semiconductor field-effect transistors is presented. Fluorine (F) has been incorporated into the atomic-layer-deposited gate dielectric by postgate plasma treatment. The effects of radio-frequency (rf) power and plasma treatment time were studied systematically. An appropriate amount of F incorporated in gate dielectric brings great improvement in electrical characterization. The treatment of rf power of for is the optimum condition for the stack. It is believed to be due to the great reduction of the oxide fixed charge in the bulk.