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Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe/sub 3/O/sub 4/ rather than Fe/sub 2/O/sub 3/. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe/sub 3/O/sub 4/ layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.
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Lu et al. (2005) studied this question.
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