AlAs-GaAs superlattices are grown at 300°C on (100) GaAs substrates by migration-enhanced epitaxy at various As4 deposition rates. They are then annealed at temperatures higher than the growth temperature. Superlattices grown at closely optimized As4 deposition rates are unaffected by thermal annealing at temperatures as high as 800°C. After annealing, no change is observed in photoluminescence linewidth, and only slight changes are observed in its efficiency and emission energy.
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Saku et al. (1988) studied this question.
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