The orientation dependence of ballistic electron transport in GaAs is investigated using the pseudopotential band structure. It is shown that a single scattering event can permit electron impact-ionisation threshold energies to be reached in the 〈111〉 and 〈100〉 directions. This is in contrast to ballistic calculations, where simple thresholds do not exist in these directions.
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Shichijo et al. (1980) studied this question.
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