Air-Gap Capacitance–Voltage Analyses of p-InP Surfaces Covered with Natural Oxide

Air-gap capacitance–voltage ( C – V ) characteristics of p-InP surfaces covered with natural oxide and treated with hydrogen–fluoride (HF) acid are reported for the first time. These surfaces show deep-depletion C – V behavior with large and distinctive hysteresis. To interpret the obtained C – V curves, a model was used that introduced a donor-like discrete level in the band-gap. Another assumption in this model is that the capture velocity of the discrete level and/or the generation–recombination rate of the minority carrier of the substrate is very low. By use of this model, the measured air-gap C – V curve was successfully reproduced.