In the letter we report that through the use of rapid thermal annealing (RTA) and the coimplantation of phosphorus an effective way of preventing the in-diffusion of zinc has been achieved. We have observed that the electrical activation characteristics of the Zn-implanted samples have been modified after the coimplantation of phosphorus. Furthermore, abrupt electrical profiles with hole concentrations of the order of 6×1019/cm3 have been achieved after annealing at 850°C for 30s.
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Tang et al. (1989) studied this question.
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