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The In concentration dependence of newly observed Cr-related luminescence lines has been systematically investigated by a low-temperature photoluminescence (PL) method in In,Cr-codoped GaAs. As a result, it has been found that the luminescence center of these In,Cr-related PL lines is a complex of InGa-CrGa-VAs. Furthermore, their relative peak positions with respect to the well-known Cr-VAs PL line have been analyzed by using uniaxial stress data, the result suggesting that local lattice distortion of about 1% is induced by In doping in GaAs.
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Fujiwara et al. (1986) studied this question.
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