Antimony Concentration Limitation in Dislocation-Free CZ Silicon Crystals

The maximum antimony concentration can be incorporated in a Si(100) crystal using the Czochralski (CZ) crystal growth method was investigated. The antimony limitation was found to be about using a charge size of . It was limited by the occurrence of constitutional supercooling in the center of the crystal. A ripple or instability in the solid/melt interface was observed in the center of the crystal at the onset of constitutional supercooling. Cellular growth structure was observed when the ripple reached a critical magnitude of in the growth direction. When cellular growth occurred, cellular structure formed and dislocation networks were found in the boundaries of the cells. The melt temperature gradient at the solid/melt interface was calculated to be about .