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A systematic analysis of heat treatment experiments on a large number of melt-grown GaAs crystals with different concentrations of carbon revealed that the carbon concentration strongly affects thermal conversion. That is, the crystal with a higher concentration, larger than 1.5×1016 cm-3, showed a greater tendency to convert during the 20 min anneal at 850°C with a Si3N4 cap than the crystal with a concentration of carbon less than 1.5×1016 cm-3. This is further evidence of outdiffusion of the main electron trap, EL2, during the anneal.
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Obokata et al. (1986) studied this question.
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