Use of orthogonalized-plane-wave bands and wave functions in the calculation of acoustic deformation potentials

The scattering of electrons by acoustic phonons in an InSb-like semiconductor has been shown previously to be influenced strongly by the symmetry of the electronic wave function near the conduction-band minimum. In this work we show how to extract values of the acoustic "deformation potentials" ε₀, ε₁, and ε₂ from the self-consistent relativistic orthogonalized-plane-wave claculations for InSb and InAs. With their use one can compute the energy dependence of the electronic scattering.