1 µm gate length, In 0.75 Ga 0.25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm

The first demonstration of implant-free, flatband-mode In0.75Ga0.25As channel n-MOSFETs is reported. These 1 µm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm2/Vs and sheet carrier concentration of 3.3×1012 cm−2, utilise a Pt gate, a high-κ dielectric (κ≃20), and a δ-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (Id,sat) of 933 µA/µm, extrinsic transconductance (gm) of 737 µS/µm, gate leakage (Ig) of 40 pA, and on-resistance (Ron) of 555 Ω · µm. The gm and Ron figures of merit are the best reported to date for any III-V MOSFET.