Structural and electrical characterization of chemical-solution-derived Bi5FeTi3O15thin films

Thin films of Fe-containing Aurivillius phase Bi 5 FeTi 3 O 15 (BFTO) were prepared using the chemical solution deposition method. The structures of the films were analysed using x-ray diffraction and Raman spectroscopy. The surface topography and crystal microstructure were characterized by AFM and FESEM. The remanent polarization (2 P r ) and coercive field ( E c ) of BFTO thin films under an electric field of ∼570 kV cm −1 are determined to be 35.5 µC cm −2 and 171 kV cm −1 , respectively. The normalized polarization of BFTO thin films under 285 kV cm −1 decreased to 66% after being subjected to 5.2 × 10 9 read/write cycles. A comparison between BFTO and SrBi 4 Ti 4 O 15 in Raman spectra and ferroelectric behaviour is also presented. The leakage current density measurement reveals that the conduction mechanism of BFTO thin films in the intermediate electric field range from ∼50 to ∼200 kV cm −1 is dominated by Schottky emission. With an electric field higher than ∼200 kV cm −1 , the leakage behaviour is mingled with different conduction mechanisms.