Answers are grounded in this paper and cite their sources.
The valence band discontinuity (ΔEV) of sputter deposited HfO2/InZnGaO4 (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO2 exhibited a bandgap of 6.07 eV from absorption measurements. A value of ΔEV = 0.48 ± 0.025 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. This implies a conduction band offset ΔEC of 2.39 eV in HfO2/InGaZnO4 heterostructures and a nested interface band alignment.
No takes yet. Share an insight, caveat, or question.
Cho et al. (2012) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: