Thermal Stress and Stacking Fault Energy Estimated by TEM Observations of Grown-in Dislocations in Si-Doped GaAs Single Crystals

The internal stress caused by thermal stress of Si-doped GaAs is estimated to be about 22 MPa utilizing the bow-out segments of screw dislocation and this value is equal to the upper yield stress at 740 K of the same specimen in this experiment. All grown-in dislocations observed are dissociated and the dissociation width of screw dislocations is 2.8 to 4.4 nm. Since these values are almost same as those of screw dislocations induced by plastic deformation, Coulomb force between the two partials of grown-in dislocations are negligible. The stacking fault energy measured with grown-in dislocations of Si-doped GaAs is (39 ± 7) mJ m−2.