The quantum efficiency of an InGaAs/InP photodetector has increased from 50 to 70.2% at λ=1550 nm by applying a Ti/Au reflector with a SiO2 phase-matched-layer at the back of the device. The ultra-broadband mirror has a simple fabrication process and promising reflectivity (97.9% for the reference and 79% for the InGaAs/InP photodetector). These results are comparable to the other more commonly used high-reflectivity mirrors.
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Yuan et al. (2012) studied this question.
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