Photo-absorption characteristics of GaAs0.5Sb0.5 lattice-matched to InP substrate and the DC performance of GaAs0.5Sb0.5/InP pin photodiodes are reported. The absorption coefficient of GaAs0.5Sb0.5 and the responsivity of the fabricated pin photodiodes were measured to be 6.8×103 cm−1 and 0.57 A/W under 1.55 µm radiation, respectively.
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Park et al. (2008) studied this question.
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