We demonstrate a GaAsSb resonant-cavity-enhanced p-i-n photodetector grown on a GaAs substrate. The device exhibited a peak external quantum efficiency of 54% at the wavelength of 1.3 μm and a full-width at half-maximum of 8 nm. The breakdown voltage was 12 V and avalanche gain up to ten was observed. The absorption coefficient (/spl alpha/) of GaAs/sub 0.65/Sb/sub 0.35/ at 1.3 μm is estimated to be /spl sim/7.3×103/cm.
No takes yet. Share an insight, caveat, or question.
Sun et al. (2002) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: